Design of a High Speed CMOS Image Sensor with a Hybrid Single-Slope Column ADC and a Finite State Machine

被引:0
作者
Park, Keunyeol [1 ]
Jin, Minhyun [1 ]
Kim, Soo Youn [1 ]
Song, Minkyu [1 ]
机构
[1] Dongguk Univ, Dept Semicond Sci, Seoul, South Korea
来源
PROCEEDINGS INTERNATIONAL SOC DESIGN CONFERENCE 2017 (ISOCC 2017) | 2017年
关键词
CMOS image sensor; hybrid single-slope column ADC; sampling capacitor; single ramp generator; 4-input comparator; finite state machine;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, design of a CMOS Image sensor (CIS) with a hybrid single-slope ADC is presented. To obtain a small size and a high conversion rate CIS, no sampling capacitor structure is employed. This is implemented with a DC reference voltage and a single ramp generator. Further, by changing the input node of comparator, it reduces gain errors generated by a conventional 4-input comparator's differentia pair. The proposed hybrid ADC selects the resistor DAC's reference voltage controlled by a Finite State Machine(FSM), and converts the residual voltage with the single slope technique. Based on 1-Poly 5-Metal 90nm back side illuminated(BSI) CIS process, the chip satisfies 1920 x 1440 pixel resolution whose pitch is 1.4um and 1.75-Tr active pixel sensor(APS).
引用
收藏
页码:95 / 96
页数:2
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