Superposition model for dielectric charging of RF MEMS capacitive switches under bipolar control-voltage waveforms

被引：41
作者：
Peng, Zhen [1 ]
Yuan, Xiaobin [2 ]
Hwang, James C. M. [1 ]
Forehand, David I. [3 ]
Goldsmith, Charles L.
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
[2] IBM Corp, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
[3] MEMtronics Corp, Plano, TX 75075 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2007年 / 55卷 / 12期
关键词：
charge injection; dielectric films; dielectric materials; microelectromechanical devices; switches;
D O I：
10.1109/TMTT.2007.909475
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bipolar control-voltage waveforms, under which the control voltage alternates between positive and negative after each cycle, have been proposed to mitigate dielectric charging in electrostatically actuated RF microelectromechanical system capacitive switches. In this study, dielectric charging under bipolar waveforms is modeled and characterized quantitatively. In general, the experimental results agree with predictions based on the superposition of unipolar charging models that are extracted under positive and negative voltages, respectively. The basic assumptions for such a superposition model are examined in detail and validated experimentally. The current analysis indicates that, while bipolar waveforms can reduce charging, it is difficult to fine tune the waveforms to completely eliminate charging.
引用
收藏
页码：2911 / 2918
页数：8
相关论文
共 25 条
  • [1] Charging of radiation induced defects in RF MEMS dielectric films
    Exarchos, M.
    Papandreou, E.
    Pons, P.
    Lamhamdi, M.
    Papaioannou, G. J.
    Plana, R.
    [J]. MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1695 - 1699
  • [2] Goldsmith C, 2001, IEEE MTT-S, P227, DOI 10.1109/MWSYM.2001.966876
  • [3] Goldsmith C. L., 2007, 2007 International Microwave Symposium (IMS 2007), P1805, DOI 10.1109/MWSYM.2007.380099
  • [4] Herfst R, 2006, ICMTS 2006: PROCEEDINGS OF THE 2006 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, P133
  • [5] KCKO JF, 2006, IEEE MICROW WIREL CO, V16, P140
  • [6] Charging-effects in RF capacitive switches influence of insulating layers composition
    Lamhamdi, M.
    Guastavino, J.
    Boudou, L.
    Segui, Y.
    Pons, P.
    Bouscayrol, L.
    Plana, R.
    [J]. MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1700 - 1704
  • [7] Investigation of stiction effect in electrostatic actuated RF MEMS devices
    Melle, S.
    Bordas, C.
    Dubuc, D.
    Grenier, K.
    Vendier, O.
    Muraro, J. L.
    Cazaux, J. L.
    Plana, R.
    [J]. 2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 173 - +
  • [8] Modeling of the dielectric charging kinetic for capacitive RF-MEMS
    Mellé, S
    De Conto, D
    Mazenq, L
    Dubuc, D
    Grenier, K
    Bary, L
    Vendier, O
    Muraro, JL
    Cazaux, JL
    Plana, R
    [J]. 2005 IEEE MTT-S International Microwave Symposium, Vols 1-4, 2005, : 757 - 760
  • [9] Reliability modeling of capacitive RF MEMS
    Mellé, S
    De Conto, D
    Dubuc, D
    Grenier, K
    Vendier, O
    Muraro, JL
    Cazaux, JL
    Plana, R
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (11) : 3482 - 3488
  • [10] MOLINERO D, 2006, J APPL PHYS, V89, P901
123