Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

被引:42
作者
Sbai, N. [1 ,2 ]
Perriere, J. [2 ]
Seiler, W. [3 ]
Millon, E. [1 ]
机构
[1] Univ Orleans, CNRS, GREMI, UMR 6606, F-45067 Orleans 2, France
[2] Univ Paris 06, Inst Nanosci Paris, CNRS, UMR 7588, F-75015 Paris, France
[3] ENSAM, CNRS, LIM, UMR 8006, F-75013 Paris, France
关键词
pulsed-laser deposition; epitaxy; titanium oxide; sapphire; X-ray diffraction;
D O I
10.1016/j.susc.2007.09.019
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
C-cut and alpha-cut sapphire substrates are used to grow epitaxial titanium oxide films by pulsed-laser deposition at 700 degrees C under a controlled oxygen pressure in the 10(-1)-10(-5) mbar range. The rutile phase is evidenced in films whatever the substrate and the oxygen pressure while the anatase phase is only observed on c-cut sapphire substrate and for oxygen pressure down to 10(-3) mbar. No other titanium oxide phases (i.e. TiO, Ti2O3 or Magneli phases) are identified despite the oxygen-deficiency observed in films grown at low oxygen pressure. According to asymmetric X-ray diffraction measurements performed on films, the main axis growth and the in-plane epitaxial relationships between titanium oxide films and sapphire substrates are found to be depending on the orientation of the sapphire basal plane and on the oxygen pressure. The anatase crystallites are highly oriented with the following epitaxial relationship (004)[110](A)// (00.1)[1 (1) over bar .0](c-S). The rutile phase is (200) oriented on c-cut sapphire substrate and displays two distinct in-plane relationships: [010](R)//[10-0](c-S) or [011](R)//[1 (1) over bar .0](c-S). The use of alpha-cut sapphire substrate leads to the growth of rutile crystallites (200) or (101) oriented. In these cases, the in-plane orientations are (200)[010](R)//(11.0)[00.1](alpha-S), and (101)[10 (1) over bar](R)//(11.0)[1 (1) over bar .0](alpha-S), respectively. For the two substrates used, schematic views of atomic arrangement of the different interfaces are proposed. (c) 2007 Elsevier B.V. All rights reserved.
引用
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页码:5649 / 5658
页数:10
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