Spectroscopic silicon imaging detectors:: Past achievements and new developments

被引：3
作者：
Lutz, G.
Andritschke, R.
Andricek, L.
Eckhardt, R.
Englhauser, J.
Fuchs, G.
Haelker, O.
Hartmann, R.
Heinzinger, K.
Hermann, S.
Holl, P.
Kimmel, N.
Lechner, P.
Meidinger, N.
Porro, M.
Richter, R. H.
Schaller, G.
Schnecke, M.
Schopper, F.
Soltau, H.
Strueder, L.
Treis, J.
Weichert, U.
Woelfl, S.
机构：
[1] Max Planck Institut für extraterrestrische Physik, MPI Semiconductor Laboratory, D 81739München
[2] Max Planck Institut für Physik, MPI Semiconductor Laboratory, D 81739 München
[3] PNSensor GmbH, MPI Semiconductor Laboratory, D 81739 München
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 580卷 / 02期
关键词：
silicon detector; pixel detector; imaging; spectroscopy; DEPFET; RNDR; XMM; XEUS;
D O I：
10.1016/j.nima.2007.06.092
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The need of high quality spectroscopic semiconductor imaging detectors in X-ray astronomy was the principal driving force in founding the NIPI Semiconductor Laboratory. Detectors developed in this laboratory are based on new function principles and are processed in the silicon detector processing line established within the laboratory. We describe the development of pnCCDs as already used in the XMM-Newton European X-ray observatory and foreseen for eROSITA, the DEPFET based pixel detector for XEUS and a new development which makes it possible to measure charge with a precision below one elementary charge. A noise value of 0.25 electron r.m.s. has already been reached. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码：960 / 967
页数：8
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