Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates

被引：16

作者：

Alghoraibi, I. ^{[1
]}

Rohel, T. ^{[1
]}

Piron, R. ^{[1
]}

Bertru, N. ^{[1
]}

Paranthoen, C. ^{[1
]}

Elias, G. ^{[1
]}

Nakkar, A. ^{[1
]}

Folliot, H. ^{[1
]}

Le Corre, A. ^{[1
]}

Loualiche, S. ^{[1
]}

机构：

[1] INSA, LENS FOTON, F-35043 Rennes, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期

关键词：

D O I：

10.1063/1.2827177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dot lasers grown on (311)B InP substrates with AlGaInAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which cannot be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalisation of carriers within quantum dot ensemble. (c) 2007 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 16 条

[1] Self-assembled InAs quantum dots grown on InP (311)B substrates:: Role of buffer layer and amount of InAs deposited [J].

Alghoraibi, I. ;

Rohel, T. ;

Bertru, N. ;

Le Corre, A. ;

Letoublon, A. ;

Caroff, P. ;

Dehaese, O. ;

Loualiche, S. .

JOURNAL OF CRYSTAL GROWTH, 2006, 293 (02) :263-268

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] Low threshold current density and negative characteristic temperature 1.3 μm InAs self-assembled quantum dot lasers [J].

Badcock, T. J. ;

Royce, R. J. ;

Mowbray, D. J. ;

Skolnick, M. S. ;

Liu, H. Y. ;

Hopkinson, M. ;

Groom, K. M. ;

Jiang, Q. .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[4] High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107 [J].

Caroff, P ;

Paranthoen, C ;

Platz, C ;

Dehaese, O ;

Folliot, H ;

Bertru, N ;

Labbé, C ;

Piron, R ;

Homeyer, E ;

Le Corre, A ;

Loualiche, S .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[5] The role of Auger recombination in the temperature-dependent output characteristics (T0 = ∞) of p-doped 1.3 μm quantum dot lasers [J].

Fathpour, S ;

Mi, Z ;

Bhattacharya, P ;

Kovsh, AR ;

Mikhrin, SS ;

Krestnikov, IL ;

Kozhukhov, AV ;

Ledentsov, NN .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5164-5166

[6]

Fréchengues S, 1999, APPL PHYS LETT, V74, P3356, DOI 10.1063/1.123343

[7] 1.5μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure [J].

Fukano, H ;

Noguchi, Y ;

Kondo, S .

ELECTRONICS LETTERS, 1999, 35 (01) :41-43

[8] From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) [J].

Gendry, M ;

Monat, C ;

Brault, J ;

Regreny, P ;

Hollinger, G ;

Salem, B ;

Guillot, G ;

Benyattou, T ;

Bru-chevallier, C ;

Bremond, G ;

Marty, O .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :4761-4766

[9] LOW THRESHOLD CURRENT GALNAS/ALLNAS RIDGE MQW LASERS WITH INP CLADDING LAYERS [J].

KAWAMURA, Y ;

NONAKA, K ;

MIKAMI, O .

ELECTRONICS LETTERS, 1988, 24 (10) :637-638

[10] Room-temperature operation of InP-based InAs quantum dot laser [J].

Kim, JS ;

Lee, JH ;

Hong, SU ;

Han, WS ;

Kwack, HS ;

Lee, CW ;

Oh, DK .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1607-1609