Unusual electrical resistivity anomalies of thulium thin films at low temperatures

被引:5
作者
Dudas, J [1 ]
Feher, A
Kavecansky, V
机构
[1] Tech Univ, Dept Theoret Electrotech & Elect Measurement, Kosice 04389, Slovakia
[2] Safarik Univ, Dept Expt Phys, Kosice 04001, Slovakia
[3] Slovak Acad Sci, Inst Expt Phys, Kosice 04353, Slovakia
关键词
electrical resistivity; low temperatures; thulium thin films; X-ray diffraction;
D O I
10.1016/S0925-8388(98)00259-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High precision electrical resistance measurements were performed in the temperature range from 4.2 K up to room temperature on a pure thulium bulk sample with a high residual resistivity ratio, RRR=146, and on thulium thin films in the thickness interval from 25 to 115 nm. The observed size-effect of the electrical resistivity is in accordance with theory and it is without resistivity vs. thickness anomalies. The typical "hump-backed" anomaly in the resistivity vs. temperature dependence was observed for the Tm bulk sample near the Neel temperature. In contrast, unexpected resistivity vs. temperature anomalies were observed for thulium thin films in the low temperature region below similar to 60 K and near similar to 170 K. A crystal structure study using X-ray diffraction revealed that these thin films were single phase with the Tm hcp crystal structure and with preferential orientation of crystallites. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1 / 5
页数:5
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