Structure and stability of the Si(105) surface

被引：25

作者：

Ciobanu, CV

Shenoy, VB ^{[1
]}

Wang, CZ

Ho, KM

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Iowa State Univ, US Dept Energy, Ames Lab, Ames, IA 50011 USA

[3] Iowa State Univ, Dept Phys, Ames, IA 50011 USA

来源：

SURFACE SCIENCE | 2003年 / 544卷 / 2-3期

基金：

美国国家科学基金会;

关键词：

molecular dynamics; semi-empirical models and model calculations; surface relaxation and reconstruction; surface energy; silicon; germanium;

D O I：

10.1016/j.susc.2003.08.028

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recent experimental studies have shown that well-annealed, unstrained Si(1 0 5) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy. We construct new models for the Si(1 0 5) surface that are based on single- and double-height steps separated by Si(0 0 1) terraces, and propose that the observed surface disorder of Si(1 0 5) originates from the presence of several structural models with different atomic-scale features but similar energies. This degeneracy can be removed by applying compressive strains, a result that is consistent with recent observations of the structure of the Ge/Si(1 0 5) surface. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：L715 / L721

页数：7

共 16 条

[1] Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation [J].