Structure and stability of the Si(105) surface

被引：25
作者：
Ciobanu, CV
Shenoy, VB [1 ]
Wang, CZ
Ho, KM
机构：
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Iowa State Univ, US Dept Energy, Ames Lab, Ames, IA 50011 USA
[3] Iowa State Univ, Dept Phys, Ames, IA 50011 USA
来源：
SURFACE SCIENCE | 2003年 / 544卷 / 2-3期
基金：
美国国家科学基金会;
关键词：
molecular dynamics; semi-empirical models and model calculations; surface relaxation and reconstruction; surface energy; silicon; germanium;
D O I：
10.1016/j.susc.2003.08.028
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Recent experimental studies have shown that well-annealed, unstrained Si(1 0 5) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy. We construct new models for the Si(1 0 5) surface that are based on single- and double-height steps separated by Si(0 0 1) terraces, and propose that the observed surface disorder of Si(1 0 5) originates from the presence of several structural models with different atomic-scale features but similar energies. This degeneracy can be removed by applying compressive strains, a result that is consistent with recent observations of the structure of the Ge/Si(1 0 5) surface. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：L715 / L721
页数：7
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