Wide-band VCOs in SiGe production technology operating up to about 70 GHz

被引：11

作者：

Li, H ^{[1
]}

Rein, HM

Makon, RE

Schwerd, M

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Fraunhofer Inst Appl Solid State Phys, IAF, D-79108 Freiburg, Germany

[3] Infineon Technol AG, D-81739 Munich, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 10期

关键词：

millimeter-wave VCO; SiGe bipolar circuit; wide-band VCO;

D O I：

10.1109/LMWC.2003.818520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multipurpose VCOs with wide tuning range and oscillation frequencies up to 74 GHz (on wafer) and 69 GHz (mounted chip, with output buffer), respectively, have been fully integrated in a commercial SiGe production technology. To the best of the authors' knowledge these are record values for commercially available Si-based technologies, despite the moderate transistor f(T) (62 GHz). The oscillation frequency can easily be dropped down to 41.5 GHz by cutting interconnection lines in the upper metallization layer. The phase noise obtained depends on the frequency range chosen and is sufficiently low for the intended applications.

引用

页码：425 / 427

页数：3

共 4 条

[1]

KLEIN W, 1999, P ESSDERC, P88

[2] Millimeter-wave VCOs, with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology [J].