CMOS Stacked Folded Differential Structure Power Amplifier for High Power RF Application

被引：2

作者：

Luque, Yohann ^{[1
]}

Kerherve, Eric ^{[1
]}

Deltimple, Nathalie ^{[1
]}

Leyssenne, Laurent ^{[1
]}

Belot, Didier ^{[2
]}

机构：

[1] Univ Bordeaux, IPB ENSEIRB MATMECA, IMS Lab, F-33405 Talence, France

[2] Minatec, STMicroelect, Grenoble, France

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2010年 / 20卷 / 06期

关键词：

PA; SFDS; CMOS; 0 13 mu m;

D O I：

10.1002/mmce.20465

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

This article describes the feasibility of a Power Amplifier (PA) in 0.13 mu m CMOS technology from STMicroelectronics for high power applications. To obtain a high output power with a good linearity, a new topology called Stacked Folded Differential Structure (SFDS) is proposed. It allows obtaining similar power performances to a PA with DAT in a lower the area. This PA provides 23 dBm of maximum output power (P-max) with 20% of power added efficiency (PAE) at 1.95 GHz. The linear gain is equal to 11 dB and the output power at 1 dB compression point (OCP1) achieves 21 dBm. (C) 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE 20 611-618, 2010

引用

页码：611 / 618

页数：8

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