MBE growth and characterization of in situ arsenic doped HgCdTe

We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single Hg1-xCdxTe layers of x similar to 0.3 were grown at a lower growth temperature of 175 degrees C to increase the arsenic incorporation into the layers. Layers grown at 175 degrees C have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm(-2). Void defect densities can routinely be achieved at levels below 1000 cm(-2). Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry. Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300 degrees C results in activation of the arsenic at concentrations ranging from 2E16 to 2E18 cm(-3). Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation after isothermal anneals at 436 or 300 degrees C. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient.