The stability of periodically poled domain structures in near-stoichiometric lithium tantalite, LiTaO3, (SLT) crystals exhibiting a low coercive field has become an important issue in the use of quasiphase-matching (QPM) devices. Temperature-induced backswitching in inverted domain structures in a 1.0 mol % MgO-doped SLT-QPM device with a QPM period of 6.1 mu m used for the second harmonic generation of 488-nm-wavelength light was investigated using scanning force microscopy. It was revealed that backswitching consistently occurred due to heat treatment and that the amount was dependent on the temperature history. We propose an effective method of suppressing backswitching in the inverted domain structures of SLT-QPM devices on the basis of systematically analyzing the backswitching phenomena. (c) 2007 American Institute of Physics.