Muon-Induced Single Event Upsets in Deep-Submicron Technology

被引：94

作者：

Sierawski, Brian D. ^{[1
]}

Mendenhall, Marcus H. ^{[2
]}

Reed, Robert A. ^{[2
]}

Clemens, Michael A. ^{[2
]}

Weller, Robert A. ^{[2
]}

Schrimpf, Ronald D. ^{[2
]}

Blackmore, Ewart W. ^{[3
]}

Trinczek, Michael ^{[3
]}

Hitti, Bassam ^{[3
]}

Pellish, Jonathan A. ^{[4
]}

Baumann, Robert C. ^{[5
]}

Wen, Shi-Jie ^{[6
]}

Wong, Rick ^{[6
]}

Tam, Nelson ^{[7
]}

机构：

[1] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37203 USA

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37203 USA

[3] TRIUMF, Vancouver, BC V6T 2A3, Canada

[4] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[5] Texas Instruments Inc, Dallas, TX 75243 USA

[6] Cisco Syst Inc, San Jose, CA 95134 USA

[7] Marvell Semicond Inc, Santa Clara, CA 95054 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Direct ionization; Geant4; Monte Carlo; muons; single event upset (SEU); static random access memory (SRAM); SILICON-ON-INSULATOR; MEMORY CELLS; STATIC RAMS; LATCHES;

D O I：

10.1109/TNS.2010.2080689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental data are presented that show low-energy muons are able to cause single event upsets in 65 nm, 45 nm, and 40 nm CMOS SRAMs. Energy deposition measurements using a surface barrier detector are presented to characterize the kinetic energy spectra produced by the M20B surface muon beam at TRIUMF. A Geant4 application is used to simulate the beam and estimate the energy spectra incident on the memories. Results indicate that the sensitivity to this mechanism will increase for scaled technologies.

引用

页码：3273 / 3278

页数：6

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