High-speed quantum-dot vertical-cavity surface-emitting lasers

被引:27
|
作者
Ledentsov, Nikolai N. [1 ]
Hopfer, Friedhelm
Bimberg, Dieter
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
high-speed modulation; optical interconnects; semiconductor lasers; surface-emitting lasers; 1.3; MU-M; LOW-THRESHOLD; MODULATION CHARACTERISTICS; OPTICAL-PROPERTIES; CONFINED SUBLEVEL; MODE-LOCKING; WELL LASER; INJECTION; VCSELS; POWER;
D O I
10.1109/JPROC.2007.900898
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on recent progress in high-speed quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs). Advanced types of QD media allow an ultrahigh modal gain, avoid temperature depletion, and gain saturation effects. Temperature robustness up to 100 degrees C for 0.96-1.25 mu m range devices is realized in the continuous wave (cw) regime. An open eye 20 Gb/s operation with bit error rates better than 10(-12) has been achieved in a temperature range 25 degrees C-85 degrees C without current adjustment. A different approach for ultrahigh-speed operation is based on a combination of the VCSEL section, operating in the CW mode with an additional section of the device, which is electrooptically modulated under a reverse bias. The tuning of a resonance wavelength of the second section, caused by the electrooptic effect, affects the transmission of the system. The approach enables ultrahigh-speed signal modulation. 60 GHz electrical and similar to 35 GHz optical (limited by the photodetector response) bandwidths are realized.
引用
收藏
页码:1741 / 1756
页数:16
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