Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell

被引：16

作者：

Chen, W. ^{[1
]}

Chamele, N. ^{[1
]}

Gonzalez-Velo, Y. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Kozicki, M. N. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 09期

关键词：

PMC; CBRAM; RRAM; Cu; silica; low temperature; direct tunneling; RANDOM-ACCESS MEMORY;

D O I：

10.1109/LED.2017.2734743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

引用

页码：1244 / 1247

页数：4

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