Electron Ballistic Current Enhancement of Ge1-xSnx FinFETs

被引：0
作者：
Lan, H. -S [1 ]
Liu, C. W. [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
来源：
PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2014年
关键词：
SEMICONDUCTORS; ALLOYS;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The indirect-direct transition of Ge1-xSnx at Sn content 6.5% is simulated by nonlocal empirical pseudopotential method. The non-parabolicity band of Gamma valley is considered for confined mass, density of state, and conductivity mass for the electron ballistic current calculation of Ge1-xSnx FinFETs. The integration of alloying Sn content and applying external stress enhances the ballistic current due to carriers transferring from indirect L valleys with small injection velocity to direct Gamma valley and other indirect L valleys with high injection velocity.
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