Backend Low-k TDDB Chip Reliability Simulator

被引：0

作者：

Bashir, Muhammad ^{[1
]}

Kim, Dae Hyun ^{[1
]}

Athikulwongse, Krit ^{[1
]}

Lim, Sung Kyu ^{[1
]}

Milor, Linda ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2011年

关键词：

Copper interconnects; TDDB; dielectric breakdown; chip lifetime; reliability; METHODOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Copper metallization. We present test data and link it to a methodology to evaluate chip lifetime due to low-k time-dependent dielectric breakdown. Other failure mechanisms can be integrated into our methodology. We analyze several layouts using our methodology and present the results to show that the methodology can enable the designer to consider easy design modifications and their impact on lifetime, separate from the design rules.

引用

页数：10

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