Two-dimensional numerical simulation of HgCdTe infrared detectors

被引：10

作者：

Jo, NH ^{[1
]}

Yoo, SD ^{[1
]}

Ko, BG ^{[1
]}

Lee, SW ^{[1
]}

Jang, J ^{[1
]}

Lee, SD ^{[1
]}

Kwack, KD ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2 | 1998年 / 3436卷

关键词：

HgCdTe; 2D numerical simulator; modified transport models; photovoltaic devices; two-color detectors;

D O I：

10.1117/12.328063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, Han Yang university SEmiconductor DEvice Simulator (HYSEDES). The modified transport models are included to describe the inherent natures of HgCdTe such as the degeneracy, the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation-recombination mechanisms regarding tunneling phenomena. For the advanced devices employing multiple junction, all the material parameters are described as a function of the position. The simulations are performed for some devices such as photo-voltaic devices and two color detectors to prove the validity of the overall models in the simulator and its capability.

引用

页码：50 / 60

页数：11

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