Phase-shifting Effect of Thin-absorber EUV Masks

被引：11

作者：

Tanabe, Hiroyoshi ^{[1
]}

Murachi, Tetsunori ^{[1
]}

Lee, Sang H.

Chandhok, Manish

Park, Seh-Jin

Zhang, Guojing

Abe, Tsukasa

Ogase, Taichi

Hayashi, Naoya

机构：

[1] Intel KK, 5-6 Tokodai, Tsukuba, Ibaraki 3002635, Japan

来源：

PHOTOMASK TECHNOLOGY 2011 | 2011年 / 8166卷

关键词：

EUV mask; Thin absorber; Phase-shifting effect;

D O I：

10.1117/12.895149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase-shifting effect of EUV masks with various absorber thicknesses has been studied both by simulations and experiments. In EUV lithography, masks with 180 phase shifting absorber work like embedded attenuated phase-shifting masks. At 66nm thickness of TaN/TaON absorber, 180 degree phase shifting can be achieved in theory. Based on the experiments, we observed that the true180 degree phase shifting can be achieved with absorber thickness between 66 and 76 nm. In this paper, phase shifting impact of the various thickness absorbers has been characterized. Imaging performance of masks with 51 nm, 66 nm and 76 nm thick absorber has been experimentally compared. The process window of various thickness absorber masks are rigorously studied.

引用

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