Anomalous Hall effect in Cu doped Bi2Te3 topological insulator

被引:7
|
作者
Singh, Abhishek [1 ]
Kumar, Shiv [2 ]
Singh, Mahima [1 ]
Singh, Prajyoti [1 ]
Singh, Rahul [1 ]
Gangwar, Vinod K. [1 ]
Lakhani, Archana [3 ]
Patil, Swapnil [1 ]
Schwier, Eike F. [2 ]
Matsumura, Takeshi [4 ]
Shimada, K. [2 ]
Ghosh, A. K. [5 ]
Chatterjee, Sandip [1 ]
机构
[1] Banaras Hindu Univ, Indian Inst Technol, Dept Phys, Varanasi 221005, Uttar Pradesh, India
[2] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, 2-313 Kagamiyama, Higashihiroshima 7390046, Japan
[3] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
[4] Hiroshima Univ, Dept Quantum Matter, AdSM, Higashihiroshima 7398530, Japan
[5] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India
基金
日本学术振兴会;
关键词
Anomalous Hall effect; topological insulator; angle resolved photo emission spectroscopy; Magnetoresistance; Shubnikov de-Hass (SdH) oscillations; SB2TE3; BI2SE3; STATES;
D O I
10.1088/1361-648X/ab8521
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The angle resolved photo-emission spectroscopy (ARPES) study and magneto-transport properties of Bi2CuxTe3-x have been investigated. ARPES study indicates the clear existence of surface states in the as-prepared samples. The estimated bandgap from ARPES is found to be similar to 5 meV and 16 meV respectively for x = 0.03 and x = 0.15 samples. Presence of larger Cu concentration (x = 0.15) introduces magnetic ordering. Observed non-linearity in the Hall data is due to the existence of anomalous Hall effect which can be attributed to the 2D transport. The observed magneto-transport features might be related to the surface carriers which is confirmed by ARPES study.
引用
收藏
页数:11
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