Contacting of Si/SiO2 core/shell nanowires using laser photolithography

被引：0

作者：

Benyettou, F. ^{[1
,3
]}

Aissat, A. ^{[1
,2
]}

Benamar, M. E. A. ^{[3
]}

Berbezier, I. ^{[2
]}

机构：

[1] Univ Blida 1, Fac Technol, Lab LATSI, Blida 09000, Algeria

[2] Aix Marseille Univ, CNRS UMR7334, IM2NP, F-13397 Marseille 20, France

[3] Univ Blida 1, Fac Sci, Lab FUNDAPL, Blida 09000, Algeria

来源：

INTERNATIONAL CONFERENCE ON TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY, TMREES17 | 2017年 / 119卷

关键词：

Nanowires; Laser; photolithography; solar cell;

D O I：

10.1016/j.egypro.2017.07.060

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The contamination results of extended ion or electron beam irradiation, the type of substrate used, the time required to contact a set of nanowires to gain accurate acknowledge on nanowires properties are the main limitations of focused ion beam (FIB) and electron beam lithography (EBL) techniques for nanowires characterization. We present in this latter, a direct writing technique which is laser photolithography to contact a set of core/shell Si/SiO2 nanowires fabricated by 30 KeV AuSi liquid metal alloy source focused ion beam LMAIS-FIB using Au+ ions to allow forward the electrical characterization of these nanowires. (C) 2017 The Authors. Published by Elsevier Ltd.

引用

页码：131 / 138

页数：8

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