Effect of substrate temperature on the structure, electrical and optical properties of Mo doped ZnO films

被引:18
作者
Chen, Guifeng [1 ]
Zhao, Xiaoli [1 ]
Zhang, Hui [1 ]
Wang, He [1 ]
Liu, Feifei [1 ]
Zhang, Xiaoqiang [1 ]
Gao, Jianbo [2 ]
Zhao, Yanmin [3 ]
Zhang, Chao [3 ]
Tao, Junguang [1 ]
机构
[1] Hebei Univ Technol, Sch Mat Sci & Engn, Key Lab New Type Funct Mat Hebei Prov, Tianjin 300130, Peoples R China
[2] China Inst Atom Energy, Beijing 102413, Peoples R China
[3] China Elect Technol Grp Corp, Res Inst 18, Tianjin 300384, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2016年 / 211卷
基金
中国国家自然科学基金;
关键词
Molybdenum-doped ZnO; Magnetron sputtering; Transparent conductive oxides films; PULSED-LASER DEPOSITION; THIN-FILMS; SPRAY-PYROLYSIS; CELL APPLICATIONS;
D O I
10.1016/j.mseb.2016.05.020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mo-doped ZnO (MZO) transparent conductive thin films were prepared on glass substrate under various substrate temperature from 50 degrees C to 200 degrees C. The microstructural, electrical and optical properties of the MZO films were investigated by X-ray diffraction (XRD), Hall effect and UV-vis spectrophotometer. Based on XRD measurements, all films are polycrystalline with preferential c-axis growth. The lowest resistivity was obtained to be 2.8 x 10(-3) Omega.cm. According to X-ray photoelectron spectroscopy (XPS) measurement, the valence of the Mo ions in the ZnO matrix is a mixture of +5 and +6. In addition, the transmittance of the film is 80% throughout the visible light region. Our results indicate that the MZO films are suitable for potential transparent optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:135 / 140
页数:6
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