Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy

被引：64

作者：

Selim, F. A. ^{[1
]}

Solodovnikov, D. ^{[1
]}

Weber, M. H. ^{[1
]}

Lynn, K. G. ^{[1
]}

机构：

[1] Washington State Univ, Mat Res Ctr, Pullman, WA 99164 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 10期

关键词：

D O I：

10.1063/1.2780119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Positron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y3Al5O12 (YAG) single crystals. By annealing at 1500 degrees C in air or O, and diffusing Al into a Ce doped YAG single crystal, a reduction of nearly two orders of magnitude in vacancy concentration was observed. Scintillation measurements showed a significant improvement in energy resolution after Al diffusion. This study revealed the presence of vacancy-defect complexes, most likely associated with cation antisites in YAG crystals. (C) 2007 American Institute of Physics.

引用

页数：3

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