Effect of electric field on the photoelectric emission from a spherical quantum dot

被引：0

作者：

Bose, C ^{[1
]}

Chakraborty, C ^{[1
]}

Sarkar, CK ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Calcutta 700032, W Bengal, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of an electric field on the photoelectric (PE) current density resulting from a spherical quantum dot (QD) of wide-gap semiconductors has been theoretically investigated under the electric quantum limit, We use a perturbation method to estimate a shift in the ground level energy of the electrons confined in the dots. The PE current density computed for GaAs QDs has been found to decrease with the increase in the applied field strength.

引用

页码：81 / 84

页数：4