Current-driven interface magnetic transition in complex oxide heterostructure

被引：1
作者：
Fang, F. [1 ]
Zhai, H. [1 ]
Ma, X. [1 ]
Yin, Y. W. [2 ]
Li, Qi [2 ]
Lupke, G. [1 ]
机构：
[1] Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA
[2] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2017年 / 35卷 / 04期
基金：
美国国家科学基金会;
关键词：
MULTIFERROIC TUNNEL-JUNCTIONS; SPIN POLARIZATION; FERROELECTRIC CONTROL; PHYSICS; TRANSPORT; BARRIERS;
D O I：
10.1116/1.4976587
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interfacial spin state of n-type BaTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La0.7Sr0.3MnO3 from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts. (C) 2017 American Vacuum Society.
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页数：4
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