MOCVD Synthesis of Terbium Oxide Films and their Optical Properties

被引：20

作者：

Belaya, Svetlana V. ^{[1
]}

Bakovets, Vladimir V. ^{[2
]}

Asanov, Igor P. ^{[1
,2
]}

Korolkov, Ilya V. ^{[1
]}

Sulyaeva, Veronika S. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

CHEMICAL VAPOR DEPOSITION | 2015年 / 21卷 / 4-6期

关键词：

Tb(thd)(3) precursor; Terbium oxides; X-ray photoelectron spectroscopy; LANTHANUM GADOLINIUM OXIDE; RAY-PHOTOEMISSION SPECTRA; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; XPS; METALS; LASER; TB;

D O I：

10.1002/cvde.201507153

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd)(3) in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800 degrees C, followed by cooling in air, leads to the formation of Tb4O7. The Ar ion-etching of the annealed films causes a reduction of Tb4+ to Tb3+. Optical E-g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.

引用

页码：150 / 155

页数：6

共 54 条

[1] The binary rare earth oxides [J].

Adachi, G ;

Imanaka, N .

CHEMICAL REVIEWS, 1998, 98 (04) :1479-1514

[2] Photoluminescent thin films of terbium chloride-doped yttrium oxide deposited by the pulsed laser ablation technique [J].

Alonso, JC ;

HaroPoniatowski, E ;

Diamant, R ;

FernandezGuasti, M ;

Garcia, M .

THIN SOLID FILMS, 1997, 303 (1-2) :76-83

[3]

Andreeva A. F., 1977, POLUCHENIE SVOISTVA, V4, P107

[4]

[Anonymous], 2013, NETZSCH PROT THERM A

[5] Thermo luminescence of Y2O3:Tb3+ thin films deposited by electron beam evaporation [J].

Armstrong, Philip R. ;

Mah, Merlin L. ;

Kim, Sangho S. ;

Talghader, Joseph J. .

JOURNAL OF LUMINESCENCE, 2014, 148 :225-229

[6]

Baklanov M., 2007, DIELECTRIC FILMS ADV, DOI [10.1002/9780470017944, DOI 10.1002/9780470017944]

[7] Chemical vapor deposition of copper films from copper dipivaloylmethanate in hydrogen atmosphere [J].

Bakovets, VV ;

Levashova, TM ;

Dolgovesova, IP ;

Danilovich, VS .

INORGANIC MATERIALS, 2002, 38 (05) :457-463

[8] CHARACTERIZATION OF THIN SOLID FILMS OF RARE-EARTH-OXIDES FORMED BY THE METALLOORGANIC CHEMICAL-VAPOR-DEPOSITION TECHNIQUE, FOR HIGH-TEMPERATURE CORROSION APPLICATIONS [J].

BONNET, G ;

LACHKAR, M ;

COLSON, JC ;

LARPIN, JP .

THIN SOLID FILMS, 1995, 261 (1-2) :31-36

[9] SEMICONDUCTION IN NON-STOICHIOMETRIC RARE EARTH OXIDES [J].

CHANDRASHEKHAR, GV ;

MEHROTRA, PN ;

RAO, GVS ;

SUBBARAO, EC ;

RAO, CNR .

TRANSACTIONS OF THE FARADAY SOCIETY, 1967, 63 (533P) :1295-+

[10] Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate [J].

Chin, Wen Chiao ;

Cheong, Kuan Yew .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (12) :1816-1826

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