Design and Characterization of a Wideband p-HEMT Low Noise Amplifier

被引：0

作者：

Kumar, Arpit ^{[1
]}

Pathak, Nagendra Prasad ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & Commun Engn, Radio Frequency Integrated Circuits RFIC Lab, Roorkee 247667, Uttar Pradesh, India

来源：

2014 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING, COMMUNICATIONS AND INFORMATICS (ICACCI) | 2014年

关键词：

bias network; gain; p-HEMT; matching; noise figure; wide band;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper reports a pseudomorphic high electron mobility transistor (HEMT) wide band low noise amplifier (LNA) for WLAN, vehicle communication systems and point to point communication applications. The LNA had been designed by using a single ATF36163 transistor. A wide band bias network has been designed and verified over the desired frequency range. The fabricated prototype of the proposed LNA has a gain of 2.5 dB with a noise figure (NF) of 1.3 dB over the frequency range of 5-6 GHz. The designed amplifier has bandwidth of 1 GHz over the frequency range from 5-6 GHz.

引用

页码：785 / 788

页数：4

共 7 条

[1]

[Anonymous], IC200424 EPFL

[2]

Gonzalez G., 1997, MICROWAVE TRANSISTOR, V2

[3] A CONCURRENT DUAL-BAND LNA FOR NONINVASIVE VITAL SIGN DETECTION SYSTEM [J].