Low noise AlGaN metal-semiconductor-metal photodiodes

被引：13

作者：

Monroy, E

Calle, F

Muñoz, E

Omnès, F

Gibart, P

机构：

[1] Univ Politecn Madrid, ETSI Telecomun, Dept Ingn Elect, Madrid 28040, Spain

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 03期

关键词：

D O I：

10.1049/el:19990153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN metal-semiconductor-metal photodiodes with a sharp cutoff wavelength as short as 310nm are reported for the first time. The devices show a low dark current, < 0.3 mu A at 40V. The responsivity is flat over the bandgap, with a high visible rejection. At 28V bias, the noise equivalent power is lower than 17pW/Hz(1/2) and similar to 24 pW/Hz(1/2) in GaN and Al0.25Ga0.75N photodiodes, respectively.

引用

页码：240 / 241

页数：2

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