Simultaneous model-based main feature and SRAF optimization for 2D SRAF implementation to 32 nm critical layers

被引:1
作者
Yehia, Ayman [1 ]
Tritchkov, Alexander [2 ]
机构
[1] Mentor Graph Corp, Cairo, Egypt
[2] Mentor Graph Corp, Wilsonville, OR 97070 USA
来源
PHOTOMASK TECHNOLOGY 2007, PTS 1-3 | 2007年 / 6730卷
关键词
resolution enhancement techniques; RET; optical proximity correction; OPC; sub-resolution assist feature; SRAF; process window;
D O I
10.1117/12.747448
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sub-resolution Assist Feature (SRAF) insertion is one of the most important Resolution Enhancement Techniques (RET) for the 65 nm, 45 nm nodes and beyond. In this paper, we are proposing a novel approach for the optimum placement of 2D SRAF structures using state of the art Calibre RET flow. In this approach, the optimal SRAF shapes are achieved simultaneously during the OPC step. The SRAF and main features are optimized to account for their edge placement and process window metrics (aerial image slope/contrast, out of focus/dose EPE, etc...). The resulting mask shapes deliver some of the properties that can be obtained using the Inverse Lithography Techniques (ILT), such as excellent Process Window Performance, while there is almost no impact on the runtime. The implemented model-based optimization flow remains compatible with the current OPC production flows.
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页数:10
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