STRUCTURE, MORPHOLOGY AND OPTICAL PROPERTIES OF Al - DOPED ZnO THIN FILMS

被引：0

作者：

Girbovan, Dorina ^{[1
]}

Bodea, Marius Aurel ^{[2
]}

Marconi, Daniel ^{[1
]}

Pedarnig, Johannes David ^{[2
]}

Pop, Aurel ^{[1
]}

机构：

[1] Univ Babes Bolyai, Fac Phys, Cluj Napoca 400084, Romania

[2] Johannes Kepler Univ Linz, Inst Appl Phys, A-4040 Linz, Austria

来源：

STUDIA UNIVERSITATIS BABES-BOLYAI CHEMIA | 2011年 / 56卷 / 03期

关键词：

ZnO; AZO thin films; morphology; structure; electrical resistance; reflectance; SUBSTRATE-TEMPERATURE; SOLAR-CELLS; DEPOSITION;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Undoped and Al-doped ZnO thin films (AZO) were prepared on Si substrates by using the RF magnetron sputtering technique. In order to improve the film crystallinity of ZnO films, different target-substrate distances were used. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) show that the surface morphology changes function of synthesis parameters and it is influenced by Al doping. From X-ray diffraction (XRD), it is found that all films have c-axis preferred orientation and that the grain size is influenced by both target-substrate distance and doping with Al. The influence of Al doping on electrical properties was studied by electrical resistivity measurement as a function of temperature. Optical reflectance spectra were performed for undoped and Al doped ZnO thin films, both grown under the same conditions.

引用

页码：213 / 220

页数：8

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