High resolution near-field spectroscopy investigation of tilted InGaN quantum wells

被引：3

作者：

Hitzel, F ^{[1
]}

Ahrend, U ^{[1
]}

Riedel, N ^{[1
]}

Rossow, U ^{[1
]}

Hangleiter, A ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Tech Phys, D-38106 Braunschweig, Germany

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303386

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the emission wavelength dependence of InGaN quantum wells on surface tilt. A sample was prepared by overgrowing an SiC substrate with etched trenches and was investigated by a high resolution near field optical spectroscope (spectroscopy SNOM). We found out that emission wavelength on tilted surfaces is strongly blue shifted even by small surface tilts of about 1 degree. Possible explanations for the blue shift are a reduced growth rate and therefore a reduced quantum well thickness, a reduced piezoelectric field or a different In incorporation during growth. The significance of each of these effects are discussed in this paper. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2674 / 2677

页数：4

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