L10-Ordered MnAl Thin Films with High Perpendicular Magnetic Anisotropy Using TiN Underlayers on Si Substrates.

被引:0
|
作者
Huang, E. Y. [1 ]
Kryder, M. H. [1 ]
机构
[1] Carnegie Mellon Univ, Elect & Comp Engn, Pittsburgh, PA 15213 USA
来源
2015 IEEE MAGNETICS CONFERENCE (INTERMAG) | 2015年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GT-03
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页数:1
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