Room-temperature low-threshold current-injection InGaAs quantum-dot microdisk lasers with single-mode emission

被引：45

作者：

Mao, Ming-Hua ^{[1
,2
,3
]}

Chien, Hao-Che ^{[1
,2
]}

Hong, Jay-Zway ^{[1
,2
]}

Cheng, Chih-Yi ^{[1
,2
]}

机构：

[1] Dept Elect Engn, Taipei 10617, Taiwan

[2] Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 15期

关键词：

D O I：

10.1364/OE.19.014145

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We fabricated current-injection InGaAs quantum-dot microdisk lasers with benzocyclobutene cladding in this work. The microdisk pedestal diameter is carefully designed to facilitate carrier injection and modal control. With this structure, low threshold current of 0.45 mA is achieved at room temperature from a device of 6.5 mu m in diameter with single-mode emission from quantum-dot ground states. The negative characteristic temperature T-0 of threshold current is observed between 80 K and 150 K. The transition temperature from negative T-0 to positive T-0 is 150 K which is higher than that of the edge-emitting lasers fabricated from the same wafer. This phenomenon indicates the lower loss level of our microdisk cavities. These microdisk lasers also show positive T-0 significantly higher than that of the edge-emitting lasers from the same wafer. (C)2011 Optical Society of America

引用

页码：14145 / 14151

页数：7

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