Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers

The incorporation of Eu ions into GaN has been studied using combined excitation-emission spectroscopy for samples that were in situ doped during organometallic vapor-phase epitaxy (OMVPE) growth. The obtained fingerprints of characteristic emission spectra are subsequently used to determine the coupling of the Eu ions to the crystal lattice. We find a majority site, which exhibits coupling to bulk-like phonon modes as well as a localized phonon mode. For this site, we also find that the zero-phonon line of the (7)F(0) to (5)D(0) transition, which is forbidden, is much weaker than the phonon-coupled excitation transitions. The ratio of zero-phonon to phonon-coupled transition strength depends on the crystalline quality of the layer. These observations are consistent with the assignment of the majority site to an unperturbed Eu ion on Ga position. We find that the relative abundance of the majority site is strongly underestimated whenever the zero-phonon (7)F(0) to (5)D(0) excitation transition is used as a measure. Published by Elsevier B.V.