Giant valley splitting in a MoTe2/MnSe2 van der Waals heterostructure with room-temperature ferromagnetism
被引:15
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作者:
Li, Qianze
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机构:
Hunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R ChinaHunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
Li, Qianze
[1
,2
]
Zhang, Cai-xin
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机构:
Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R ChinaHunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
Zhang, Cai-xin
[2
]
Wang, Dan
论文数: 0引用数: 0
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机构:
Cent South Univ Forestry & Technol, Inst Math & Phys, Changsha 410018, Peoples R ChinaHunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
Wang, Dan
[3
]
Chen, Ke-Qiu
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h-index: 0
机构:
Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R ChinaHunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
Chen, Ke-Qiu
[2
]
Tang, Li-Ming
论文数: 0引用数: 0
h-index: 0
机构:
Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R ChinaHunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
Tang, Li-Ming
[2
]
机构:
[1] Hunan First Normal Univ, Sch Phys & Chem, Changsha 410205, Peoples R China
[2] Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
[3] Cent South Univ Forestry & Technol, Inst Math & Phys, Changsha 410018, Peoples R China
来源:
MATERIALS ADVANCES
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2022年
/
3卷
/
06期
基金:
中国国家自然科学基金;
关键词:
MOS2;
POLARIZATION;
D O I:
10.1039/d1ma01196k
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
An intrinsic large valley splitting has been realized in van der Waals (vdW) heterostructures formed by monolayer MoTe2 and layered room-temperature ferromagnetic MnSe(2)via first-principles calculations. The value of valley splitting of MoTe2 can reach 106 meV among a variety of stacking MoTe2/MnSe2 heterobilayers, which is equivalent to the effective Zeeman splitting in an external magnetic field of 530 T. And the magnitude of valley splitting can be further enhanced by applying external vertical-stress and biaxial compressive strain. To obtain a higher operating temperature, a biaxial tensile strain of 2.3% has been applied on the monolayer MnSe2 magnetic substrate, and the corresponding Curie temperature increased from an intrinsic value of 266 K to 353 K, but the valley splitting can still remain as large as 72 meV. This means that we can strike a balance between large valley splitting and high Curie temperature, which is vital for the application of magnetic valley electronic devices.
机构:
Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Samsung Elect, Semicond R&D Ctr, Hwaseong 18448, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Kim, Whan Kyun
Shin, Yong Ha
论文数: 0引用数: 0
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机构:
Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Shin, Yong Ha
Kim, Namgun
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机构:
Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Samsung Elect, Semicond R&D Ctr, Hwaseong 18448, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Kim, Namgun
Lee, Jee Hwan
论文数: 0引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Samsung Elect, Memory CVD Technol Team, Hwaseong 18448, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Lee, Jee Hwan
Cho, Hyun
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Hwaseong 18448, South Korea
Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Cho, Hyun
Lee, Jae-Hyeok
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Hwaseong 18448, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Lee, Jae-Hyeok
Nguyen, Minh Chien
论文数: 0引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Nguyen, Minh Chien
Yu, Woo Jong
论文数: 0引用数: 0
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机构:
Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea
机构:
Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China
Gao, Yinlu
Liu, Qinxi
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机构:
Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China
Liu, Qinxi
Jiang, Xue
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机构:
Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China
Jiang, Xue
Zhao, Jijun
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机构:
Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China
机构:
Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Ngoc Thanh Duong
Bang, Seungho
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机构:
Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Bang, Seungho
Lee, Seung Mi
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机构:
KRISS, Daejeon 34113, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Lee, Seung Mi
Dang, Dang Xuan
论文数: 0引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Dang, Dang Xuan
Kuem, Dong Hoon
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机构:
Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Kuem, Dong Hoon
Lee, Juchan
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机构:
Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Lee, Juchan
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机构:
Jeong, Mun Seok
Lim, Seong Chu
论文数: 0引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaSungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea