Defect and interface studies of ZnO/MgxZn1-xO heterostructures

被引：11

作者：

Vashaei, Z. ^{[1
]}

Minegishi, T. ^{[1
]}

Suzuki, H. ^{[1
]}

Cho, M. W. ^{[2
]}

Yao, T. ^{[1
,2
]}

机构：

[1] Tohoku Univ, Ctr Interdisciplinary Res, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2008年 / 69卷 / 2-3期

关键词：

defects;

D O I：

10.1016/j.jpcs.2007.07.032

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The defect characteristics of ZnO layers grown on thin MgxZn1-xO buffer layers with two different crystal structures Of Cubic and wurtzite are investigated by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTFM) and high-resolution X-ray diffraction (HRXRD). It was found that the screw dislocation density of ZnO layers grown on MgZnO-wurtzite buffer layer are lower than ZnO layers grown on MgZnO-cubic buffer layers, while the edge dislocation density in ZnO layers grown on MgZnO-wurtzite buffer layer are slightly higher than for ZnO layers grown on MgZnO-cubic buffer layers. Dislocation loop and stacking fault were observed in ZnO/MgZnO-cubic layers. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：497 / 500

页数：4

共 12 条

[1] Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Yao, T .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :559-561

[2] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[3] Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si [J].

Contreras, O ;

Ponce, FA ;

Christen, J ;

Dadgar, A ;

Krost, A .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4712-4714

[4] Origin and consequences of a high stacking fault density in epitaxial ZnO layers [J].

Gerthsen, D ;

Litvinov, D ;

Gruber, T ;

Kirchner, C ;

Waag, A .

APPLIED PHYSICS LETTERS, 2002, 81 (21) :3972-3974

[5]

HIRTH JP, 1982, THEORY DISLOCATIONS, P354

[6] Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures:: transmission electron microscopy and triple-axis X-ray diffractometry [J].

Hong, SK ;

Ko, HJ ;

Chen, YF ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :537-541

[7] Optical properties of excitons in ZnO-based quantum well heterostructures [J].

Makino, T ;

Segawa, Y ;

Kawasaki, M ;

Koinuma, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S78-S91

[8] Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn/O flux ratios [J].

Setiawan, A ;

Vashaei, Z ;

Cho, MW ;

Yao, T ;

Kato, H ;

Sano, M ;

Miyamoto, K ;

Yonenaga, I ;

Ko, HJ .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) :3763-3768

[9] Study on MgO buffer in ZnO layers grown by plasma-assisted molecular beam epitaxy on Al2O3 (0001) [J].

Setiawan, A ;

Ko, HJ ;

Hong, SK ;

Chen, YF ;

Yao, TF .

THIN SOLID FILMS, 2003, 445 (02) :213-218

[10] Microstructure and crystal defects in epitaxial ZnO film grown on Ga modified (0001) sapphire surface [J].

Sun, HP ;

Pan, XQ ;

Du, XL ;

Mei, ZX ;

Zeng, ZQ ;

Xue, QK .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4385-4387

← 1 2 →