4H-SiC epitaxial growth on SiC substrates with various off-angles

被引：15
|
作者：
Saitoh, H [1 ]
Kimoto, T
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Toyota Motor Co Ltd, Mat Engn Div 3, Shizuoka 4101193, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
homoepitaxial growth; off-angle; chemical vapor deposition; C/Si ratio; carrier concentration;
D O I：
10.4028/www.scientific.net/MSF.483-485.89
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 10 to 45° has been investigated. On large-off-angled (15°-45°) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4°-45° off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate's off-angle.
引用
收藏
页码：89 / 92
页数：4
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