Epitaxial growth of InN films on MgAl2O4 (111) substrates

被引：4
作者：
Tsuchiya, T [1 ]
Miki, O [1 ]
Shimada, K [1 ]
Ohnishi, M [1 ]
Wakahara, A [1 ]
Yoshida, A [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 03期
关键词：
InN; MgAl2O4 (111) substrate; group-III nitride;
D O I：
10.1016/S0022-0248(00)00547-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Epitaxial InN layers were deposited on MgAl2O4 (1 1 1) substrates by microwave-excited metalorganic vapor-phase epitaxy. The crystallographic orientation relationships between the InN layer and MgAl2O4 (1 1 1) were InN (0 0 . 1)\\MgAl2O4 (1 1 1) and InN [1 1 . 0]\\MgAl2O4 [1 0 0]. The full-width at half-maximum of the X-ray rocking curve of 97 arcsec was obtained on MgAl2O4 (1 1 1). (C) 2000 Published by Elsevier Science B.V.
引用
收藏
页码：185 / 190
页数：6
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