Electrochromic performance of sol-gel deposited V2O5: Ta films

被引：30

作者：

Avellaneda, Cesar O. ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Quim, LIEC, BR-13565905 Sao Carlos, SP, Brazil

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 138卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

V2O5 : Ta film; counter-electrode film; sol-gel process; OXIDE THIN-FILMS; VANADIUM; DIFFUSION;

D O I：

10.1016/j.mseb.2006.06.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vanadium and tantalum-doped vanadium pentoxide, V2O5 and V2O5:Ta thin films (2.5 and 5 mol% of Ta) were prepared using sol-gel dip coating technique. The coating solutions were prepared by reacting vanadium (V) oxytripropoxide and tantalum ethoxide (V) as precursors using anhydrous isopropyl alcohol as solvent. The films were deposited on a transparent glass substrate with ITO conducting film by dip coating technique, with a withdrawal of 20 cm/min from the vanadium-tantalum solution and thermally treated at 300 degrees C for 1 h. The resulting films were characterized by cyclic voltammetry, optical spectroscopy and by X-ray diffraction analysis (XRD). The morphology of the films were studied by atomic force microscopy (AFM). The feasibility for use of these electrodes as ion storage for electrochromic devices was investigated. (c) 2006 Published by Elsevier B.V.

引用

页码：118 / 122

页数：5

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