Chemical vapor deposition of WS2/Mo1-xWxS2/MoS2 lateral heterostructures

被引：5
作者：
Fang, Xiudong [1 ]
Tian, Qianqian [1 ]
Sheng, Yun [2 ]
Yang, Guofeng [1 ]
Lu, Naiyan [3 ]
Wang, Jin [1 ]
Zhang, Xiumei [1 ]
Zhang, Yixin [1 ]
Yan, Xiaomi [4 ]
Hua, Bin [4 ]
机构：
[1] Jiangnan Univ, Jiangsu Prov Res Ctr Light Ind Optoelect Engn & T, Sch Sci, Wuxi 214122, Peoples R China
[2] State Key Lab PV Sci & Technol, Trina Solar 213031, Changzhou, Peoples R China
[3] Jiangnan Univ, State Key Lab Food Sci & Technol, Wuxi 214122, Peoples R China
[4] Jiangsu Xinguanglian Semicond Co Ltd, Wuxi 214000, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 123卷
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
WS2/Mo1-xWxS2/MoS2; Lateral heterostructures; Optical property; Chemical vapor deposition; BORON-NITRIDE; INPLANE HETEROSTRUCTURES; GRAPHENE; GROWTH; ELECTRONICS; MONOLAYER; PHYSICS;
D O I：
10.1016/j.spmi.2018.09.017
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The growth of lateral heterostructures of two-dimensional (2D) transition metal chalcogenides (TMDCs) opens up new paths for promising electronic and optoelectronic devices. Here, we Lateral heterostructures demonstrate the one-step growth of 2D WS2/Mo1-xWxS2/MoS2 lateral heterostructures prepared on Si substrates by chemical vapor deposition (CVD), and the growth mechanism of WS2/Mo-1. Chemical vapor deposition (x)WxS(2)/MoS2 lateral heterostructures are also systematically analyzed. The variation of radial Raman and photoluminescence (PL) spectrum of crystals on Si substrates are attributed to the three different structures of WS2/Mo1-xWxS2 and /MoS2. Clear structure and optical modulation can be observed by Raman and PL mapping to further confirm the formation WS2/Mo1-xWxS2/MoS2 lateral heterostructures. According to the analysis of the optical properties and growth mechanism of the WS2/Mo1-xWxS2/MoS2 lateral heterostructures, it can be concluded that the formation of the lateral heterostructures depends on the growth temperature and chronology.
引用
收藏
页码：323 / 329
页数：7
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