Chemical vapor deposition of WS2/Mo1-xWxS2/MoS2 lateral heterostructures

被引：6

作者：

Fang, Xiudong ^{[1
]}

Tian, Qianqian ^{[1
]}

Sheng, Yun ^{[2
]}

Yang, Guofeng ^{[1
]}

Lu, Naiyan ^{[3
]}

Wang, Jin ^{[1
]}

Zhang, Xiumei ^{[1
]}

Zhang, Yixin ^{[1
]}

Yan, Xiaomi ^{[4
]}

Hua, Bin ^{[4
]}

机构：

[1] Jiangnan Univ, Jiangsu Prov Res Ctr Light Ind Optoelect Engn & T, Sch Sci, Wuxi 214122, Peoples R China

[2] State Key Lab PV Sci & Technol, Trina Solar 213031, Changzhou, Peoples R China

[3] Jiangnan Univ, State Key Lab Food Sci & Technol, Wuxi 214122, Peoples R China

[4] Jiangsu Xinguanglian Semicond Co Ltd, Wuxi 214000, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 123卷

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

WS2/Mo1-xWxS2/MoS2; Lateral heterostructures; Optical property; Chemical vapor deposition; BORON-NITRIDE; INPLANE HETEROSTRUCTURES; GRAPHENE; GROWTH; ELECTRONICS; MONOLAYER; PHYSICS;

D O I：

10.1016/j.spmi.2018.09.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The growth of lateral heterostructures of two-dimensional (2D) transition metal chalcogenides (TMDCs) opens up new paths for promising electronic and optoelectronic devices. Here, we Lateral heterostructures demonstrate the one-step growth of 2D WS2/Mo1-xWxS2/MoS2 lateral heterostructures prepared on Si substrates by chemical vapor deposition (CVD), and the growth mechanism of WS2/Mo-1. Chemical vapor deposition (x)WxS(2)/MoS2 lateral heterostructures are also systematically analyzed. The variation of radial Raman and photoluminescence (PL) spectrum of crystals on Si substrates are attributed to the three different structures of WS2/Mo1-xWxS2 and /MoS2. Clear structure and optical modulation can be observed by Raman and PL mapping to further confirm the formation WS2/Mo1-xWxS2/MoS2 lateral heterostructures. According to the analysis of the optical properties and growth mechanism of the WS2/Mo1-xWxS2/MoS2 lateral heterostructures, it can be concluded that the formation of the lateral heterostructures depends on the growth temperature and chronology.

引用

页码：323 / 329

页数：7

共 50 条

[31] Multilayered Vertical Heterostructures Comprised of MoS2 and WS2 Nanosheets for Optoelectronics [J].

Chen, Fei ;

Jiang, Xia ;

Shao, Jiaqi ;

Zhao, Shichao ;

Su, Weitao ;

Li, Yajie .

ACS APPLIED NANO MATERIALS, 2021, 4 (09) :9293-9302

[32] First-principles Raman spectra of MoS2, WS2 and their heterostructures [J].

Liang, Liangbo ;

Meunier, Vincent .

NANOSCALE, 2014, 6 (10) :5394-5401

[33] Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures [J].

Pielic, Borna ;

Novko, Dino ;

Rakic, Iva Srut ;

Cai, Jiaqi ;

Petrovic, Marin ;

Ohmann, Robin ;

Vujicic, Natasa ;

Basletic, Mario ;

Busse, Carsten ;

Kralj, Marko .

ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (42) :50552-50563

[34] Sub-1 nm MoS2 and WS2 with extremely enhanced performance [J].

Chen, Zhexue ;

Wu, Xianxin ;

Xiao, Liuyang ;

Gao, Hanbin ;

Li, Zhangqiang ;

Zhou, Xuanping ;

Li, Yueqi ;

Guo, Ning ;

Guo, Yanjun ;

Qi, Xiaoying ;

Bai, Lu ;

Chang, Huaiqiu ;

Zheng, Qiang ;

Liu, Xinfeng ;

Zhang, Yong .

NANO TODAY, 2024, 54

[35] One-Pot Selective Epitaxial Growth of Large WS2/MoS2 Lateral and Vertical Heterostructures [J].

Zhu, Juntong ;

Li, Wei ;

Huang, Rong ;

Ma, Liang ;

Sun, Haiming ;

Choi, Jin-Ho ;

Zhang, Liqiang ;

Cui, Yi ;

Zou, Guifu .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2020, 142 (38) :16276-16284

[36] MORPHOLOGICAL EVOLUTION OF MoS2 NANOSHEETS BY CHEMICAL VAPOR DEPOSITION [J].

Wang, X. ;

Zhang, Y. P. ;

Chen, Z. Q. .

CHALCOGENIDE LETTERS, 2016, 13 (08) :351-356

[37] Bidirectional heterostructures consisting of graphene and lateral MoS2/WS2 composites: a first-principles study [J].

Tang, Yingqi ;

Li, Hao ;

Mao, Xiaotong ;

Xie, Ju ;

Lee, Jin Yong ;

Fu, Aiping .

RSC ADVANCES, 2019, 9 (60) :34986-34994

[38] Scanning tunneling microscopy/spectroscopy on MoS2 embedded nanowire formed in CVD-grown Mo1-xWxS2 alloy [J].

Mogi, Hiroyuki ;

Kobayashi, Yu ;

Taninaka, Atsushi ;

Sakurada, Ryuji ;

Takeuchi, Takahiro ;

Yoshida, Shoji ;

Takeuchi, Osamu ;

Miyata, Yasumitsu ;

Shigekawa, Hidemi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (08)

[39] Layer-Dependent Nonlinear Optical Properties of WS2, MoS2, and Bi2S3 Films Synthesized by Chemical Vapor Deposition [J].

Lu, Chunhui ;

Luo, Mingwei ;

Ge, Yanqing ;

Huang, Yuanyuan ;

Zhao, Qiyi ;

Zhou, Yixuan ;

Xu, Xinlong .

ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (01) :2390-2400

[40] Seed Crystal Homogeneity Controls Lateral and Vertical Heteroepitaxy of Monolayer MoS2 and WS2 [J].

Yoo, Youngdong ;

Degregorio, Zachary P. ;

Johns, James E. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2015, 137 (45) :14281-14287

← 1 2 3 4 5 →