Chemical vapor deposition of WS2/Mo1-xWxS2/MoS2 lateral heterostructures

The growth of lateral heterostructures of two-dimensional (2D) transition metal chalcogenides (TMDCs) opens up new paths for promising electronic and optoelectronic devices. Here, we Lateral heterostructures demonstrate the one-step growth of 2D WS2/Mo1-xWxS2/MoS2 lateral heterostructures prepared on Si substrates by chemical vapor deposition (CVD), and the growth mechanism of WS2/Mo-1. Chemical vapor deposition (x)WxS(2)/MoS2 lateral heterostructures are also systematically analyzed. The variation of radial Raman and photoluminescence (PL) spectrum of crystals on Si substrates are attributed to the three different structures of WS2/Mo1-xWxS2 and /MoS2. Clear structure and optical modulation can be observed by Raman and PL mapping to further confirm the formation WS2/Mo1-xWxS2/MoS2 lateral heterostructures. According to the analysis of the optical properties and growth mechanism of the WS2/Mo1-xWxS2/MoS2 lateral heterostructures, it can be concluded that the formation of the lateral heterostructures depends on the growth temperature and chronology.