Molecular random access memory cell

被引:510
作者
Reed, MA [1 ]
Chen, J
Rawlett, AM
Price, DW
Tour, JM
机构
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[3] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[4] Rice Univ, Dept Chem, Houston, TX 77005 USA
[5] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77005 USA
关键词
D O I
10.1063/1.1377042
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times > 15 min have been observed. (C) 2001 American Institute of Physics.
引用
收藏
页码:3735 / 3737
页数:3
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