Electrical and optical properties of Cu2CdGeS4 single crystals

被引：23

作者：

Davidyuk, GE ^{[1
]}

Parasyuk, OV ^{[1
]}

Semenyuk, SA ^{[1
]}

Romanyuk, YE ^{[1
]}

机构：

[1] Lesya Ukrainka State Univ, UA-263025 Volhynia, Ukraine

来源：

INORGANIC MATERIALS | 2003年 / 39卷 / 09期

关键词：

Experimental Data; Inorganic Chemistry; Absorption Spectrum; Optical Property; Chemical Vapor;

D O I：

10.1023/A:1025596903080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu2CdGeS4 single crystals are grown by chemical vapor transport and directional solidification, and their properties are studied. Independent of the growth technique, the crystals are p-type, with a 290-K Hall mobility of holes in the range 10-15 cm(2)/(V s). The room-temperature band gap of Cu2CdGeS4 evaluated from the position of its fundamental absorption edge is E-g approximate to 2.05 eV. The nature of the defects responsible for the near-IR absorption in Cu2CdGeS4 is assessed by analyzing the absorption spectra of stoichiometric crystals prepared by different techniques and melt-grown nonstoichiometric crystals. Some of the crystals studied have a thermoelectric power as high as 1800 mV/K. Based on the experimental data, a model is proposed for the electronic processes in Cu2CdGeS4, which accounts for the observed electrical and optical properties of this semiconductor.

引用

页码：919 / 923

页数：5

共 14 条

[1]

[Anonymous], 1983, Thin Film Solar Cells P

[2]

[Anonymous], 1988, IZV AKAD NAUK SSSR N

[3]

Bonch-Bruevich V.L., 1981, ELEKT TEORIYA NEUPOR

[4] Single crystal growth and physical properties of the Cu2CdGeS4 compound [J].

Davydyuk, GY ;

Parasyuk, OV ;

Romanyuk, YE ;

Semenyuk, SA ;

Zaremba, VI ;

Piskach, LV ;

Koziol, JJ ;

Halka, VO .

JOURNAL OF ALLOYS AND COMPOUNDS, 2002, 339 (1-2) :40-45

[5]

Kittel C., 1956, INTRO SOLID STATE PH

[6]

KONSTANTINOVA NN, 1989, IAN SSSR NEORG MATER, V25, P1445

[7]

LASHKAREV VE, 1981, NERAVNOVESNYE PROTSE

[8]

Mott N. F., 2012, ELECT PROCESSES NONC

[9]

Novoselova A.V., 1979, Fiziko-khimicheskie svoistva poluprovodnikovykh veshchestv: Spravochnik (Physicochemical Properties of Semiconductors: A Handbook)

[10] CRYSTAL STRUCTURE OF CU2CDGES4 AND OTHER QUATERNARY NORMAL TETRAHEDRAL STRUCTURE COMPOUNDS [J].

PARTHE, E ;

YVON, K ;

DEITCH, RH .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL CRYSTALLOGRAPHY AND CRYSTAL CHEMISTRY, 1969, B 25 :1164-&

← 1 2 →