High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

被引：20

作者：

Cao, Yu ^{[1
]}

Che, Yuchi ^{[1
]}

Seo, Jung-Woo T. ^{[2
,3
]}

Gui, Hui ^{[4
]}

Hersam, Mark C. ^{[2
,3
]}

Zhou, Chongwu ^{[1
]}

机构：

[1] Univ Southern Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[4] Univ Southern Calif, Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 23期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; TRANSPORT; JUNCTIONS; CIRCUITS; ARRAYS;

D O I：

10.1063/1.4953074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of similar to 1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 mu S/mu m and desirable drain current saturation with an output resistance of similar to 100 K Omega mu m. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics. Published by AIP Publishing.

引用

页数：5

共 34 条

[1] Rectification properties of carbon nanotube "Y-junctions" [J].

Andriotis, AN ;

Menon, M ;

Srivastava, D ;

Chernozatonskii, L .

PHYSICAL REVIEW LETTERS, 2001, 87 (06) :66802-1

[2] Band-to-band tunneling in carbon nanotube field-effect transistors [J].

Appenzeller, J ;

Lin, YM ;

Knoch, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 93 (19) :196805-1

[3] Sorting carbon nanotubes by electronic structure using density differentiation [J].

Arnold, Michael S. ;

Green, Alexander A. ;

Hulvat, James F. ;

Stupp, Samuel I. ;

Hersam, Mark C. .

NATURE NANOTECHNOLOGY, 2006, 1 (01) :60-65

[4] Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency [J].

Cao, Yu ;

Che, Yuchi ;

Gui, Hui ;

Cao, Xuan ;

Zhou, Chongwu .

NANO RESEARCH, 2016, 9 (02) :363-371

[5]

Che Y., UNPUB

[6] T-Gate Aligned Nanotube Radio Frequency Transistors and Circuits with Superior Performance [J].

Che, Yuchi ;

Lin, Yung-Chen ;

Kim, Pyojae ;

Zhou, Chongwu .

ACS NANO, 2013, 7 (05) :4343-4350

[7] Self-Aligned T-Gate High-Purity Semiconducting Carbon Nanotube RF Transistors Operated in Quasi-Ballistic Transport and Quantum Capacitance Regime [J].

Che, Yuchi ;

Badmaev, Alexander ;

Jooyaie, Alborz ;

Wu, Tao ;

Zhang, Jialu ;

Wang, Chuan ;

Galatsis, Kosmas ;

Enaya, Hani A. ;

Zhou, Chongwu .

ACS NANO, 2012, 6 (08) :6936-6943

[8] Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors [J].

Chen, Haitian ;

Cao, Yu ;

Zhang, Jialu ;

Zhou, Chongwu .

NATURE COMMUNICATIONS, 2014, 5

[9] The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors [J].

Chen, ZH ;

Appenzeller, J ;

Knoch, J ;

Lin, YM ;

Avouris, P .

NANO LETTERS, 2005, 5 (07) :1497-1502

[10] Controlling doping and carrier injection in carbon nanotube transistors [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2773-2775

← 1 2 3 4 →