Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing

被引：9

作者：

De Silva, Milantha ^{[1
]}

Ishikawa, Seiji ^{[2
]}

Miyazaki, Takamichi ^{[3
]}

Kikkawa, Takamaro ^{[1
]}

Kuroki, Shin-Ichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Res Inst Nanodevices & Bio Syst, 1-4-2 Kagamiyama, Hiroshima 7398527, Japan

[2] Phenitec Semicond Co Ltd, 6833 Kinoko Cho, Ibara, Okayama 7158602, Japan

[3] Tohoku Univ, Sch Engn, Aoba Ku, 6-6-11 Aza Aoba, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 01期

关键词：

SILICON-CARBIDE; OHMIC CONTACTS; HIGH-TEMPERATURE; NI; MICROSTRUCTURE;

D O I：

10.1063/1.4955406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous alloys containing Ni-Si-Nb-C were formed on 4H-SiC creating a low resistance Ohmic contact electrode. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance between NiSi and SiC substrate becomes larger. For carbon agglomeration suppression, nanosecond non-equilibrium laser annealing was introduced, and to form metal carbides, carbon-interstitial type metals Nb and Mo were introduced. Ni, Nb, Mo, Nb/Ni, Mo/Ni multilayer contacts, and NbNi mixed contact were formed on the C-face side of n-type 4H-SiC wafers. The electrical contact properties were investigated after a 45 ns pulse laser annealing in N-2 ambient. As a result, with NbNi film, an amorphous alloy with Ni-Si-Nb-C was formed, and a low specific contact resistance of 5.3 x 10(-4) Omega cm(2) was realized. Published by AIP Publishing.

引用

页数：5

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