Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

被引：6

作者：

Nakazawa, H. ^{[1
]}

Osozawa, R. ^{[1
]}

Enta, Y. ^{[1
]}

Suemitsu, M. ^{[2
]}

机构：

[1] Hirosaki Univ, Grad Sch Sci & Technol, Aomori 0368561, Japan

[2] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

关键词：

Diamond-like carbon; Pulsed laser deposition; Photoelectron spectroscopy; Hydrogen; TETRAHEDRAL AMORPHOUS-CARBON; PULSED-LASER DEPOSITION; C-H FILMS; MECHANICAL-PROPERTIES; STRUCTURAL-PROPERTIES; BRILLOUIN-SCATTERING; ARC DEPOSITION; RAMAN-SPECTRA; SP(3); SPECTROSCOPY;

D O I：

10.1016/j.diamond.2010.08.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the effects of atomic-hydrogen exposure on the structure and chemical bonding of the DLC films by photoelectron spectroscopy (PES) using synchrotron radiation and Raman spectroscopy. The fraction of sp(3) bonds at the film surface, as evaluated from C1s spectra, increased at a substrate temperature of 400 degrees C by atomic-hydrogen exposure, whereas the sp3 fraction decreased at 700 degrees C with increasing exposure time. It was found that the sp3 fraction was higher at the surfaces than the subsurfaces of the films exposed to atomic hydrogen at both the temperatures. The Raman spectrum of the film exposed to atomic hydrogen at 400 degrees C showed that the clustering of sp(2) carbon atoms progressed inside the film near the surface even at such a low temperature as 400 degrees C. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1387 / 1392

页数：6

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