Spontaneous and stimulated emission in ZnCdSe/ZnSe asymmetrical double quantum wells

被引：1

作者：

Fan, XW ^{[1
]}

Yu, GY ^{[1
]}

Zhang, JY ^{[1
]}

Shen, DZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130021, Peoples R China

来源：

FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷

关键词：

stimulated emisson; ZnCdSe/ZnSe quantum well;

D O I：

10.1117/12.408288

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The spontaneous and stimalated emission in ZnCdSe/ZnSe asymmetric doule quantum wells have been studied. The exciton photoluminescence both in the nanow well and in the wide well is influenced by two factors, the exciton tunneling and the thermal dissociation processes. The change of the emission intensity is determined by the stronger one. The carrier tunneling through the thin barrier is conductive to the stimulated emission from the wide well, and the threshold can be lowered by optimizing the structure.

引用

页码：56 / 61

页数：2