Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches

被引：18

作者：

Benson, JD ^{[1
]}

Stoltz, AJ

Boyd, PR

Martinka, M

Varesi, JB

Almeida, LA

Olver, KA

Kaleczyc, AW

Johnson, SM

Radford, WA

Dinan, JH

机构：

[1] USA, CECOM, Night Vis & Elect Sensors Directorate, Ft Belvoir, VA 22060 USA

[2] USA, Res Lab, Adelphi, MD 20873 USA

[3] Raytheon Infrared Operat, Goleta, CA 93117 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 07期

关键词：

electron cyclotron resonance; etch bias; anisotropy; aspect ratio; HgCdTe;

D O I：

10.1007/s11664-003-0053-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to a combination of photoresist feature geometry and ECR plasma etch chemistry. This knowledge has led to production of trenches suitable for two-color, 20 mum pitch detectors.

引用

页码：686 / 691

页数：6

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