Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

被引：159
作者：
Sun, G. [1 ]
Soref, R. A. [2 ]
Cheng, H. H. [3 ]
机构：
[1] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
[2] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA
[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 03期
关键词：
BAND-GAP; SI; SEMICONDUCTORS;
D O I：
10.1063/1.3467766
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents the conception, modeling, and simulation of a silicon-based group-IV semiconductor injection laser diode in which the GeSn-alloy active region has a direct band gap wavelength in the 1.8 to 3.0 mu m midwave infrared for 6%-12% alpha-Sn. The strain-free monolithic P-type semiconductor/Intrinsic semiconductor/N-type semiconductor (PIN) bulk heterostructure, grown lattice matched upon a relaxed GeSn-buffer on silicon-on-insulator, is believed to be manufacturable in a complementary metal-oxide semiconductor fab. Detailed modeling is given for the type-I band offsets, carrier lifetimes, infrared gain profile and laser threshold current density J(th) in a Fabry-Perot cavity having 20-100 cm(-1) loss. The laser's temperature of operation is determined by a combination of the radiative lifetime and the nonradiative lifetime due to unwanted Auger electron-hole recombination. If we keep J(th) below 10 kA/cm(2), then we find that this laser requires cooling in the 100-200 K range, whereas J(th) at 300 K appears to be too high for a practical device. However, the GeSn quantum-well laser diode does offer a pathway to room-temperature operation. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3467766]
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页数：6
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