ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

被引：7
作者：
Yablonskii, G. P. [1 ]
Lutsenko, E. V. [1 ]
Vainilovich, A. G. [1 ]
Pavlovskii, V. N. [1 ]
Ivanov, S. V. [2 ]
Sedova, I. V. [2 ]
Sorokin, S. V. [2 ]
Kop'ev, P. S. [2 ]
机构：
[1] NASB, BI Stepanov Phys Inst, Minsk 220072, BELARUS
[2] AF Ioffe Phys Tech Inst, St Petersburg 19402, Russia
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2010年 / 356卷 / 37-40期
关键词：
Laser; Heterostructure; Quantum well; Quantum dot; Laser converter; MOLECULAR-BEAM EPITAXY;
D O I：
10.1016/j.jnoncrysol.2010.05.038
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Cd(Zn)Se/ZnSSe/ZnMgSSe laser heterostructures with an asymmetrical ZnSSe/ZnSe supperlattice waveguide, and multiple (up to 9) electronically-coupled CdSe quantum dot sheets in the active region were designed and grown by molecular beam epitaxy. Internal quantum efficiency eta(i), internal loss alpha(i), transparency threshold J(T) and characteristic gain Gamma G(0) were found to be: 58.5%, 7 cm(-1), 178 kW/cm(2), and 194 cm(-1), respectively, in a laser heterostructure with 9 electronically-coupled CdSe quantum dot active layers. A violet-green integrated laser converter with the output pulse power up to 50 mW was fabricated on the basis of the Cd(Zn)Se/ZnSSe/ZnMgSSe quantum dot laser heterostructure. The heterostructures were optically pumped by emission of a violet (lambda = 416 nm) commercial InGaN/GaN pulsed laser diode. The ways for further laser threshold reduction and increasing the efficiency are discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1928 / 1934
页数：7
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